Search
Kioxia’s Iwate Prefecture Wafer Facility Set to Manufacture 332-Layer NAND Chips in 2026, Addressing AI Data Center Requirements
2025-12-11 /
Read about 0 minute
Author：小编
Japanese semiconductor manufacturer Kioxia has announced its intention to begin mass production of its 10th-generation, 332-layer NAND flash memory chips at its Iwate Prefecture wafer fabrication plant in 2026. Leveraging CBA (CMOS Under the Array) technology, these advanced chips boast a 332-layer architecture (not 322 as previously mentioned, correcting the initial error for precision), a 59% enhancement in bit density compared to previous generations, and compatibility with a 4.8Gbps interface speed. This strategic move is designed to cater to the escalating needs for large-scale data storage and high-performance computing in AI-driven data centers.
-
C114 Communication Network -
Communication Home
7 X 24 Track global technological trends
