A research team, headed by Hu Weijin at the National Research Center for Materials Science in Shenyang, has pioneered a 'flash annealing' technique. During thermal treatment, this method attains heating and cooling rates as high as 1,000 degrees Celsius per second, effectively accomplishing what can be poetically described as an 'ice - to - fire tempering (refining process, kept for its poetic essence)' in a mere second. Leveraging this technique, the team managed to fabricate a 'lead zirconate' relaxor antiferroelectric film on a silicon wafer within just one second. This process boasts straightforward operation and is easily scalable for large - scale production, offering a commercially feasible solution for chip - level integrated energy storage. The related research findings have been published in Science Advances. By 'freezing' the unique structure of the material from high temperatures down to room temperature, the process creates nanoscale microdomains. This results in a dense and uniform film structure that effectively traps lead elements. Consequently, the energy storage density of the film capacitor is enhanced to 63.5 joules per cubic centimeter. Moreover, film capacitors produced using this process demonstrate outstanding environmental adaptability. They experience minimal reductions in energy storage density and efficiency under extreme temperature conditions. Previously, dielectric energy storage capacitors encountered difficulties in maintaining high energy storage capacity, withstanding extreme temperatures, and facilitating large - scale production. Traditional methods were overly complex, which restricted the mass production of high - performance dielectric films.