A research team led by Cai Yan and Ou Xin from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, has achieved a significant breakthrough. They successfully integrated high-quality lithium niobate thin films onto a six-inch patterned SiN wafer using the innovative "universal ion knife" stripping and transfer technique. Additionally, they have developed a heterogeneously integrated thin-film lithium niobate electro-optic modulator designed for high-speed data transmission. This innovative solution circumvents the need for etching lithium niobate thin films by employing a hybrid waveguide design that integrates silicon nitride and thin-film lithium niobate. This approach not only simplifies the fabrication process but also paves the way for wafer-level heterogeneous integration and mass production of silicon photonics platforms and thin-film lithium niobate devices.