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The Shenzhen Comprehensive Platform of the National Third-Generation Semiconductor Technology Innovation Center has achieved a pivotal breakthrough in the integration of Gallium Nitride (GaN) and Silicon Carbide (SiC). Researchers have successfully cultivated high-quality epitaxial growth of aluminum gallium nitride and gallium nitride heterostructures on commercial 8-inch, 4° off-axis 4H-SiC substrates. This innovative development dramatically reduces defect density and enhances heat dissipation capabilities, placing Shenzhen at the forefront of international standards. This milestone overcomes the technical hurdle of monolithic integration for large-scale GaN and SiC materials, solidifying the groundwork for the advancement and industrialization of GaN and SiC hybrid transistors.
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