On June 5th, reports revealed that the world’s first mass-produced silicon-based gallium nitride (GaN) RF chip designed for smart devices, independently developed by the 55th Research Institute of the China Electronics Technology Group Corporation (CETC), has recently exceeded 5 million shipments. This milestone signifies the large-scale commercialization of silicon-based GaN RF chips in the global smart device industry, offering vital support for the high-speed, full-coverage interconnection of integrated air-space-ground information networks. The chip stands out for its high power, high efficiency, ultra-wideband capabilities, and exceptional reliability, precisely meeting the rigorous demands of integrated air-space-ground communication for RF power amplifier chips. It effectively overcomes the industrialization bottleneck of high-end RF chips, paving the way for seamless global communication and the realization of a fully connected world.