Recently, the prestigious IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), a pinnacle academic event in the realm of power semiconductor technology, concluded successfully in Kumamoto, Japan. Among the submissions, two outstanding papers from Peking University's School of Integrated Circuits stood out, showcasing the institution's latest research milestones in power devices and power integrated circuits to an international audience. These papers, respectively, concentrate on GaN CMOS integration technology and the reliability physics of SiC MOSFETs.

The first paper explores GaN CMOS integration technology, which holds promise for groundbreaking applications in high-frequency, high-power density scenarios, as well as in harsh environmental conditions. The second paper delves deeply into the reliability physics of SiC MOSFETs, a critical area for enhancing the deployment of SiC-based power devices in high-voltage, high-frequency power systems. These research achievements not only underscore Peking University's substantial expertise in power semiconductor devices but also contribute Chinese insights to the ongoing evolution of this field.