Search
Zhongxin Wafer Receives Patent for "Method for Enhancing Metal Deposition on Silicon Wafer Edges"
1 day ago /
Read about 0 minute
Author：小编
On March 14, 2025, Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. successfully published its patent titled "Method for Enhancing Metal Deposition on Silicon Wafer Edges," bearing the application publication number CN119608644A. This groundbreaking patent introduces an innovative cleaning process that effectively minimizes metal contamination along the edges of silicon wafers and upgrades the metal integrity of recycled wafer cassettes. This development offers a robust foundation for maintaining stringent quality control in semiconductor manufacturing.
-
C114 Communication Network -
Communication Home
7 X 24 Track global technological trends
