A collaborative effort led by Dabing Li from the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, and He Tian from Zhejiang University, has achieved significant progress in the exploration of wurtzite ferroelectrics. This research has unveiled the mechanism behind the low-field-driven domain wall motion in wurtzite nitride ferroelectrics. The mechanism highlights that the lateral movement of domain walls encounters a lower energy barrier and thus prevails over longitudinal motion. This groundbreaking discovery offers a novel approach to modulating domain wall motion and minimizing energy consumption, holding immense potential for the integration of ferroelectric devices into CMOS architectures.