A research team headed by Professor Liang Hongwei and Professor Chang Yuchun from the School of Integrated Circuits at Dalian University of Technology has published an article in the esteemed academic journal Journal of Alloys and Compounds, titled "Enhancing the Photoelectric Synaptic Plasticity of β-Ga₂O₃ Films via Improving Crystalline Quality". This study significantly elevates the photoelectric synaptic plasticity of β-Ga₂O₃ films by refining their crystalline quality. The research team unveiled that the synaptic plasticity of high-quality β-Ga₂O₃ films stems from their intrinsic indirect bandgap properties, contrary to the conventional belief that it arises from defects like oxygen vacancies. This groundbreaking discovery offers crucial insights for the design and development of β-Ga₂O₃-based solar-blind ultraviolet photoelectric biomimetic synaptic devices. The research findings hold promising applications in smart sensors, neural prosthetics, and bionic vision, showcasing a diverse array of potential use cases.