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Samsung Unveils Latest Storage Roadmap
2025-05-24 /
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Author：小编
Samsung has taken a retrospective look at the evolution of DRAM cells throughout the years. During the 1990s, the planar n-channel MOS FET was the go-to transistor for DRAM cells. As we moved into the 21st century, however, challenges like short-channel effects and off-state leakage currents began to surface more prominently. To tackle these issues, the industry devised a novel transistor structure that facilitated lateral miniaturization without compromising the channel length. This innovative design was subsequently integrated into DRAM cell transistors. Thanks to the relentless advancements in lithography technology, the size of DRAM cells has consistently shrunk over time.
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