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SK Hynix has proudly introduced the groundbreaking 321-layer UFS 4.1 TLC NAND flash memory for smartphones, marking a global first. This advanced flash memory is engineered to deliver unparalleled speed, efficiency, and compactness, tailored for the next wave of smartphones designed for sleek form factors and advanced AI capabilities. Boasting a 7% enhancement in energy efficiency over its predecessor, it has been meticulously thinned down to 0.85mm, making it an ideal fit for ultra-slim smartphones. Furthermore, it embraces the UFS 4.1 standard, achieving a peak sequential read speed of 4300MB/s, along with a notable 15% boost in random read speed and a remarkable 40% increase in random write speed. Offered in capacities of 512GB and 1TB, samples are set to be delivered this year for rigorous verification, with mass production slated for the first quarter of next year.
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