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Tyco Tianrun Unveils Patent for 'Superjunction Fast Recovery Planar Gate Silicon Carbide VDMOS and Its Production Technique'
2025-04-24 /
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Author：小编
Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd. has proudly announced the acquisition of a patent titled 'Superjunction Fast Recovery Planar Gate Silicon Carbide VDMOS and Its Production Technique'. The application bears the publication number CN119584570A and was made public on March 7, 2025. This patent employs a groundbreaking manufacturing technique to incorporate a superjunction structure within the device, significantly bolstering its voltage withstanding capacity. Furthermore, it integrates a Schottky diode, which minimizes reverse recovery time and facilitates swift recovery.
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