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On April 14, 2025, Beijing hosted the inaugural meeting for the special project titled "Research on High MOS Channel Mobility and Its Low-Temperature Electronic Transport and Devices," which falls under the national key research and development program "Material State Regulation." Led by the Institute of Semiconductors at the Chinese Academy of Sciences and in collaboration with Peking University and the National University of Defense Technology, this project aims to revolutionize the field by developing quantum devices grounded in silicon MOS technology. The objective is to drastically cut down on power consumption in information processing by meticulously preparing and integrating high-quality silicon MOS gate materials with high-mobility electron channels. This groundbreaking endeavor holds immense scientific importance and practical application value.
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