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Power devices serve as the linchpin of power electronic systems, facilitating electrical energy conversion and control across a myriad of applications. As silicon-based power devices inch closer to their performance limits, third-generation semiconductor materials like silicon carbide (SiC) have emerged, leveraging their distinctive attributes such as a wide bandgap, high breakdown field strength, and rapid saturation electron velocity. These properties significantly boost the transmission power and energy conversion efficiency of space power supplies. Additionally, SiC simplifies thermal management equipment, either lowering launch costs or augmenting payload capacity, and enhances the power-to-volume ratio by nearly fivefold. This aligns perfectly with the space power system's stringent demands for high energy efficiency, miniaturization, and lightweight design.
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