In a recent collaboration, Associate Professor Chen Liu from Xidian University's School of Integrated Circuits, along with Professor Min Zhang's team from Peking University Shenzhen Graduate School and The Chinese University of Hong Kong, Shenzhen, unveiled groundbreaking research in the prestigious journal Advanced Materials. The study, titled "Ultra-Flexible High-Linearity Silicon Nanomembrane Synaptic Transistor Array," tackles the dual challenges of mechanical flexibility and interfacial charge modulation in silicon nanomembrane transistors. By introducing a novel technique to integrate organic-inorganic hybrid gate dielectrics onto the surface of ultra-thin silicon nanomembranes, the researchers have successfully developed ultra-flexible synaptic transistors.

Remarkably, these devices retain their exceptional electrical performance even after numerous bending cycles, demonstrating high linearity with an impressive accuracy rate of 93.2% in handwritten digit recognition tasks. This innovative work paves the way for the development of next-generation wearable neuromorphic electronic devices, offering a promising candidate in the realm of advanced technology.