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USTC Achieves Breakthrough in Analog Resistive Random Access Memory Device Research
2025-01-14
A research team headed by Professors Shi Yuanyuan and He Lixin from the University of Science and Technology of China (USTC) has made significant advancements in the development of analog resistive random access memory (RRAM) devices. By incorporating a single layer of molybdenum disulfide (MoS2) into the resistive layer of RRAM, the team successfully manipulated the formation of conductive filaments, markedly enhancing the uniformity, linearity, and symmetry of the devices. This groundbreaking research, published in the prestigious journal Nano Letters, holds promising implications for advancing the application of RRAM in the fields of neuromorphic computing and edge computing.
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