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Sanan Optoelectronics: Joint Venture's Current 8-Inch Epitaxy and Chip Capacity Reaches 104,000 Wafers Per Year, with Planned Capacity of 480,000 Wafers Per Year After Production
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Author：小编
Investors inquired about the timeline for Sanan Optoelectronics' Changsha Phase II project to achieve full production of 480,000 substrate wafers. On November 13, the company responded: Hunan Sanan currently has a 6-inch silicon carbide capacity of 16,000 wafers per month, an 8-inch silicon carbide capacity of 1,000 wafers per month, and a silicon-based gallium nitride capacity of 2,000 wafers per month.
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