The research group led by Peng Chen at the School of Microelectronics, Southern University of Science and Technology (SUSTech), has made significant progress in the field of P-type 2D transistors. The performance of P-type 2D transistors has long trailed that of their N-type counterparts, creating a critical bottleneck for the development of next-generation low-power 2D CMOS integrated circuits. To tackle this challenge, the team proposed an innovative weak-disorder engineering doping strategy, overcoming the core limitation of traditional impurity doping techniques for P-type 2D semiconductors, which cannot simultaneously achieve efficient hole doping and excellent hole transport performance. The findings have been published.
