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Silicon-Doped Aluminum Gallium Oxide Thin Film Sets New Record for Conductive Bandgap
8 hour ago /
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Author：小编
Semiconductors with wider bandgaps enable smaller, more efficient, and high-voltage-resistant electronics, but controlling their conductivity is challenging. A research team led by Cornell University in the United States discovered that doping silicon into aluminum gallium oxide thin films allows for stable conductivity control at wider semiconductor bandgaps than previously achievable.
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