Samsung Electronics is set to utilize TSMC's cutting-edge 3-nanometer process for crafting the base dies of NVIDIA's upcoming custom High-Bandwidth Memory (HBM) chips. This move signifies Samsung's inaugural collaboration with TSMC in the HBM production realm. Prior to this, NVIDIA had approached Samsung, SK Hynix, and Micron, urging them to manufacture NVHBM base dies utilizing TSMC's process, while producing core chips with sixth-generation DRAM technology. The NVHBM, which was unveiled in August of this year, incorporates NVIDIA's bespoke memory controller into the base die, fostering standardization across various memory providers. Following an internal assessment, Samsung agreed to this proposition and intends to maintain its autonomous production model, continuing to manufacture standard HBM and custom products for other clientele. Moreover, Samsung is exploring the feasibility of its in-house foundry producing NVHBM base dies in the event that demand surpasses TSMC's production capacity.