Recently, the research team led by Professor Zhao Weisheng from the School of Integrated Circuit Science and Engineering at Beihang University has made a significant breakthrough in the realm of spin-based chips. Leveraging a 40-nanometer CMOS process, the team successfully crafted a 96 kb voltage-controlled magnetic anisotropy magnetic random-access memory (VC-MRAM) and assembled an ultra-fast, low-energy Ising machine capable of sub-nanosecond probabilistic spin flipping. This Ising machine has been rigorously validated at the chip level for tackling industrial-grade EDA combinatorial optimization tasks. The findings reveal that the energy consumption for each spin update of the device is less than 40 femtojoules (fJ), and the system's energy efficiency soars to an impressive 1.92×10⁵ solutions per second per watt (solutions/s/W), outperforming current state-of-the-art Ising machines by a factor of 60 to 18,000.