ChangXin Memory Technologies (CXMT), a prominent Chinese DRAM producer, has announced the integration of High-K Metal Gate (HKMG) technology into its DRAM transistors. This innovative approach substitutes the conventional SiO₂ gate dielectrics with materials boasting a high dielectric constant and incorporates metal gate components. By doing so, it effectively addresses leakage challenges that arise from process miniaturization, while simultaneously boosting the operational efficiency and dependability of the transistors. This enhancement at both the material and device levels paves the way for CXMT to progress towards the more sophisticated 1a-node DRAM technology.