Recently, a research team led by Assistant Professor Mei Yang and Professor Zhang Baoping from the School of Electronic Science and Engineering at Xiamen University has achieved a significant breakthrough in the realm of gallium nitride vertical-cavity surface-emitting lasers (GaN-based VCSELs). Their latest research findings, encapsulated in the paper titled 'Comparison Between Planar and Plano-Concave Cavities in GaN-Based VCSELs,' have been published in the prestigious international journal Laser & Photonics Reviews (with an impact factor of 9.7). Through a meticulous comparison of planar and plano-concave cavity structures, this study offers a comprehensive analysis of how varying resonant cavity designs influence the performance of GaN-based VCSELs. This provides essential theoretical underpinnings for refining device architectures and boosting lasing efficiency.

Previously, this research team made history by achieving the world's first electrically injected continuous-wave lasing in the ultraviolet spectrum of GaN-based VCSELs, extending the lasing wavelength to an impressive 380.1 nm. Additionally, they successfully pioneered a compositionally graded structure that significantly reduced the lasing threshold by 71.1%. These related findings were published in esteemed journals such as Applied Physics Letters. The latest research further enriches the theoretical framework surrounding resonant cavity design for GaN-based VCSELs and holds promise for accelerating their practical deployment in diverse fields, including biomedicine, ultraviolet curing, and high-density optical storage.