Kioxia has recently made an announcement regarding the initiation of sample deliveries for its cutting-edge 10th-generation BiCS FLASH 3D flash memory technology, specifically the 1Tb TLC memory devices. This innovative product boasts a sophisticated 332-layer stacked architecture and is crafted at Kioxia's state-of-the-art Fab2 wafer fabrication facility located in Kitakami, Iwate Prefecture, Japan.

It seamlessly incorporates advanced technologies such as CMOS Bonded to Array (CBA) and Octuplex Periphery Switch (OPS), ensuring top-notch performance. Additionally, it supports the Toggle DDR6.0 interface and SCA protocol, achieving an impressive I/O interface speed of up to 4800MT/s. The memory density has been significantly enhanced to exceed 29Gb/mm², marking a notable 59% increase compared to its predecessor.

In terms of energy efficiency, this product shines with a 30% improvement in read efficiency and an 18% boost in write efficiency. Moreover, it has successfully reduced output power consumption by 34% and input power consumption by 10%. Primarily designed for enterprise-grade solid-state drives (SSDs) and data center applications, this product is poised to meet the escalating demands for high performance, substantial capacity, and low power consumption in the AI storage sector. It stands as a robust technical pillar for next-generation SSDs that support the PCIe Gen6 interface.