On July 3, 2026, the strategic alliance between Kioxia and SanDisk proudly announced the initiation of sample shipments for their latest innovation: the BiCS10 1Tb TLC flash memory chip. This cutting-edge product is a testament to their collaborative efforts in developing the 10th-generation BiCS FLASH 3D flash memory technology. Notably, the chip features an impressive 332-layer stacked architecture, a feat achieved at their state-of-the-art Fab2 wafer fabrication plant located in Kitakami, Iwate Prefecture, Japan.

This technological marvel attains a remarkable storage density of over 29 gigabits per square millimeter (Gb/mm²), marking a substantial 59% enhancement compared to its predecessor. Furthermore, with an input/output (I/O) interface speed of 4800 megatransfers per second (MT/s), the BiCS10 chip offers a notable 30% improvement in read energy efficiency and an 18% boost in write energy efficiency. These advancements are strategically designed to cater to the escalating demands of contemporary computing systems, which require expansive, high-efficiency storage solutions.