Conventional electronic devices predominantly depend on the transmission and processing of electronic charge to handle information. Nevertheless, electrons also exhibit additional degrees of freedom, such as spin and valley, in specific materials. These degrees of freedom offer new avenues for encoding, storing, and processing information, presenting the potential to surpass the limitations of traditional charge-based electronic devices in terms of both power consumption and operational speed. In two-dimensional transition metal dichalcogenides (TMDCs), the electron spin is intricately linked to the valley state. This connection enables the generation, manipulation, and detection of valley states through optical or electrical methods. Consequently, TMDCs have emerged as pivotal materials in the research of valley electronics and spintronics. However, the valley coherence time in these materials is notably brief, typically lasting on the order of sub-picoseconds. This brevity poses a challenge for conventional external magnetic field techniques to effectively achieve coherent manipulation of spin-valley states within such a limited timeframe.