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SK Hynix Tries 'Substituting Tungsten with Molybdenum' to Enhance NAND Performance
1 day ago /
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Author：小编
SK Hynix has successfully finished production verification for its cutting-edge 375-layer NAND flash memory. The company is set to initiate mass production at its Cheongju M15 plant by the year's end. Initially, the product was designed to have 400 layers, but the plan was modified to 375 layers owing to the intricate nature of the manufacturing process. The pivotal technological breakthrough involves the utilization of molybdenum as a replacement for tungsten in the construction of word lines. Molybdenum exhibits lower electrical resistance at the same dimensions as tungsten, which leads to faster data read and write speeds, along with an improvement in storage density.
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