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At ISPSD 2026, the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Rolls Out a Novel 650V All-Silicon-Based GaN Common-Source Device Solution: Tackling the S
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The 38th IEEE International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD) took place from May 24 to 28. As the premier and most influential international academic conference in the realm of power electronics across the globe, it is often referred to as the 'Olympic Games' of this field. This year, the conference centered on technologies pertaining to the structure, packaging, and reliability of next-generation power electronic devices. Only 165 academic papers were carefully selected and published.
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