Recently, drawing upon the in-plane solid-liquid-solid growth mechanism, the research team led by Professors Yu Linwei and Wang Junzhuan from Nanjing University has introduced an innovative strategy termed "step-confined heterogeneous precursor supply". This novel approach eliminates the necessity for high-precision lithography and, for the first time, enables the precise positioning and size-controllable fabrication of Ge-QDs within silicon nanowires. Leveraging the Type II band alignment characteristic of the Si/Ge interface, the team has successfully crafted single-hole transistor devices that operate stably at 50K. This achievement paves the way for the large-scale, controllable production of silicon-based quantum devices.
