Recently, the research team led by Associate Professor Qiu Hao and Professor Shi Yi from the School of Electronic Science and Engineering at Nanjing University has made remarkable strides in the realm of power device driving technology. Focusing on the challenge of severe common-mode transient (CMT) interference, which is a common issue encountered by gallium nitride (GaN) high-electron-mobility transistors (HEMTs) during high-voltage, high-speed switching operations, the team has developed two groundbreaking solutions:

Firstly, they introduced an adaptive transconductance enhancement technique. This method enhances the system's immunity to CMT interference by detecting positive and negative CMT events in real-time and subsequently boosting the oscillator's transconductance.

Secondly, the team designed a compensated frequency-shift keying (FSK) demodulator. By incorporating a compensation path into traditional demodulators, this innovation resolves the problem of unequal data symbol durations, thereby ensuring stable communication.

Measurements of the isolated system, which were validated through fabrication using a 0.18μm BCD process, revealed impressive results. The system demonstrated a static common-mode transient immunity (CMTI) of up to 299kV/μs. It also supported high-speed communication at a rate of 117Mb/s under intense interference conditions of 181kV/μs, with a remarkably low bit error rate of 10⁻⁸. Furthermore, the system was capable of handling nanosecond-level minimum pulse widths. These core metrics position the technology at the forefront internationally.

This breakthrough holds significant potential for applications in various fields, including robotics, lasers, and data center power supplies. The related research paper was published on December 2, 2025, in the IEEE Journal of Solid-State Circuits (JSSC), a leading journal in the integrated circuit industry.