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Recently, leveraging the resources of the National Key Laboratory of Advanced Light Field Display Chips and Systems, a research team led by Professor Wu Xu and Professor Shao Yan from the School of Advanced Interdisciplinary Research/School of Physics at the Beijing Institute of Technology has made significant strides in the realm of phase structure manipulation of transition metal dichalcogenides (TMDs). The team introduced an innovative stress layer fabrication technique that is fully compatible with the photolithography process. By employing patterned Al2O3 nanofilms as stress layers, they successfully achieved localized control over the phase transition behavior of TaS2 flakes. The related research findings have been published in the internationally acclaimed journal ACS Applied Materials & Interfaces.
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