The research team led by Li Xuefei and Miao Xiangshui, hailing from the National Laboratory of Pulsed High Magnetic Field and the School of Integrated Circuits at Huazhong University of Science and Technology, in a collaborative effort with Gianluca Fiori from the University of Pisa in Italy, has put forward an innovative atomic-scale adjustable oxygen-doping p-type technology. By achieving precise control over oxygen doping, this technology substantially boosts the field-effect mobility and on-state current of monolayer WSe2 (tungsten diselenide). It opens up a fresh avenue for optimizing the performance of two-dimensional semiconductor electronic devices.
