The Optoelectronic Detection and Sensing Integration Technology Team, hailing from the School of Optoelectronic Science and Engineering, has made remarkable strides in the realm of uncooled PbSe mid-wave infrared detection. Their notable accomplishments have been featured in internationally recognized journals such as Laser & Photonics Reviews (with 2 papers), ACS Photonics, Advanced Optical Materials, and Vacuum. Focusing on the challenges of high cost, bulky size, and excessive power consumption associated with existing cooled mid-wave infrared detection devices, the research team delved into the preparation of CMOS-compatible high-quality PbSe photosensitive thin films, grain boundary regulation, innovative carrier photothermal device structures, metasurface detection structures, and thin film doping techniques. Their efforts yielded several groundbreaking results: the realization of mid-wave infrared response in hot carriers through photothermoelectric effects, facilitated by grain boundary engineering strategies, with device performance exceeding that of existing uncooled polycrystalline thin film devices by two orders of magnitude; the introduction of a SnSe2/PbSe mixed-dimensional van der Waals heterojunction design, enabling high-performance broadband detection from the visible to mid-wave infrared spectrum; the development of an integrated photodetector featuring a resonant metasurface-cavity absorber, achieving broadband absorption enhancement in the 3-5 μm range and significantly improving response speed by nearly two orders of magnitude compared to traditional devices; and the innovation of an in-situ oxidation combined with co-sputtering deposition method for PbSe thin film doping, resulting in a device detection range spanning 405-5000 nm and a response speed breaking through the 1 μs barrier. These achievements pave the way for a completely novel technological approach in the development of high-performance, cost-effective uncooled mid-wave infrared detectors.