On April 27, 2026, ACM Research Shanghai heralded the official dispatch of its inaugural Plasma-Enhanced Chemical Vapor Deposition (PECVD) Silicon Carbon Nitride (SiCN) apparatus. This equipment is meticulously engineered for 300mm wafers and underpins the PECVD NDC (SiCN) process within the back-end-of-line (BEOL) metal interconnects for cutting-edge integrated circuit (IC) fabrication at 55nm and finer scales. It finds application in areas such as mitigating copper oxidation, acting as a barrier against copper diffusion, and serving as etch stop layers. The apparatus features a self-developed, three-station rotary deposition framework, capable of reaching a maximum process temperature of 400 degrees Celsius. It comes furnished with four wafer loading ports and three process chambers. Prior to its shipment to the client for final verification, it successfully underwent validation at the Lingang Laboratory.