SK Hynix is accelerating its efforts to enhance the competitiveness of its 10-nanometer sixth-generation (1c) DRAM, with extreme ultraviolet (EUV) equipment investment tripled from the original plan. The company is focusing on advancing 1c DRAM technology for application in the core chips of its seventh-generation high-bandwidth memory HBM4E, with plans to deliver samples this year. Currently, SK Hynix's 1c DRAM yield has reached 80%, and the company aims to convert more than half of its DRAM production capacity to this process within the year, with an expected monthly output of approximately 190,000 wafers by year-end.
