On April 9, 2026, ChangXin Memory Technologies, a prominent Chinese memory chip manufacturer, commenced mass production of its 12-layer high-bandwidth memory (HBM), marking a significant technological milestone achieved merely three years after its official foray into the HBM market. The adoption of 12-layer stacking technology positions ChangXin to penetrate the high-end AI hardware manufacturing sector, effectively reducing the technological gap with leading Korean firms to less than three years.

Currently, ChangXin dedicates approximately 20% of its total DRAM production capacity to HBM manufacturing, boasting a monthly output of up to 60,000 wafers. Despite this impressive capacity, its production yield still lags behind that of its Korean counterparts. At this juncture, ChangXin's primary goal is to cater to the burgeoning domestic demand for AI products while simultaneously laying a solid foundation for future expansion into the international market.

To further bolster its production capabilities, ChangXin has outlined plans to raise $4.2 billion through an initial public offering (IPO). These funds will be earmarked for the construction of new HBM production facilities and the upgrading of existing DRAM manufacturing centers. The core production infrastructure is projected to be fully operational by 2026.