SK Hynix is vigorously enhancing the competitiveness of its 10-nanometer sixth-generation (1c) DRAM. The company has significantly boosted its investments in EUV equipment for this process, with the amount nearly tripling the initial plan. SK Hynix is placing a strong emphasis on advancing 1c DRAM technology, which is set to be incorporated into the core chips of HBM4E, and aims to provide samples within this year. Considering NVIDIA's intention to unveil its next-generation AI accelerator equipped with HBM4E in the latter half of next year, SK Hynix is under pressure to accelerate its R&D efforts.

At present, the yield rate of 1c DRAM for general-purpose applications has reached 80%. The company has outlined plans to transition over half of its DRAM production capacity to 1c process products this year. By the end of the year, it is estimated that the production capacity will reach approximately 190,000 wafers.