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On April 9th, a collaborative team from the National University of Defense Technology and the Institute of Metal Research at the Chinese Academy of Sciences achieved a landmark breakthrough in the realm of high-performance two-dimensional (2D) semiconductors. Utilizing chemical vapor deposition on a liquid gold/tungsten bimetallic thin film substrate, they successfully realized wafer-scale, doping-tunable, and precisely controllable growth of single-layer WSi2N4 films. This novel material exhibits exceptional hole mobility, robust chemical stability, and remarkable overall performance, positioning it as a pivotal material for advancing autonomous and controllable chip technology in the post-Moore era. The team's findings have been published in the esteemed journal National Science Review.
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