In sectors such as smart grids, aerospace, and energy development, power conversion systems are facing ever-tightening demands for efficiency and power density. This trend is propelling the shift of power semiconductors toward wide-bandgap materials. Owing to their high operational frequencies, superior efficiency, and reliable performance under extreme temperatures and voltages, silicon carbide (SiC) power devices have emerged as pivotal components for enhancing the capabilities of power electronics systems. Nevertheless, to fully harness the material and device-level advantages of SiC and translate them into tangible system-level performance enhancements, advanced packaging and integration technologies are indispensable. Presently, packaging technology frameworks originally designed for silicon-based power devices are encountering fresh challenges when applied to SiC. Consequently, a comprehensive review of packaging and integration technologies for SiC power devices is urgently needed.