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Samsung Electronics Begins Mass Production of 236-Layer NAND Flash Memory
1 day ago /
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Author：小编
On March 30, it was reported that Samsung Electronics' Xi'an wafer plant has completed the first phase of its process upgrade, phasing out 128-layer (V6) NAND flash memory and commencing mass production of 236-layer (V8) products. This upgrade, initiated in 2024, aims to enhance performance and production efficiency. Currently, Samsung is planning further upgrades and anticipates completing the transition to 286-layer (V9) NAND flash memory this year.
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