Just two weeks after unveiling the world's inaugural commercial shipments of HBM4, Samsung is embarking on significant structural modifications to the power delivery architecture of its forthcoming HBM4E high-bandwidth memory. This move aims to tackle the power supply and thermal management hurdles inherent in next-gen AI chip architectures. The previously mass-produced HBM4 offerings already demonstrate stable operation at 11.7Gbps, with the potential to hit speeds of 13Gbps. Samsung intends to boost chip performance and dependability by revamping the power network, segmenting power bumps into more compact zones to alleviate power congestion, curtail voltage dips, and diminish heat output. According to Samsung, the revamped design slashes metal circuit defect rates in HBM4E by a staggering 97% compared to its HBM4 predecessor, enhances voltage drop reduction by 41%, and facilitates even higher operational speeds. Moreover, Samsung is delving into a decoupled design approach for HBM and GPU, leveraging photonic technology for high-speed interconnection to further mitigate thermal challenges.