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Ultraviolet photodetectors are pivotal devices for detecting and transforming ultraviolet light signals, carrying significant strategic importance in areas such as aerospace, disaster prevention and reduction, ecological monitoring, and beyond. Gallium nitride (GaN), with its broad bandgap of 3.4 eV and direct bandgap configuration, has emerged as an optimal material for constructing high-performance ultraviolet detectors. Nonetheless, constrained by material imperfections and conventional device architectures, current GaN-based metal-semiconductor-metal (MSM) and PIN-type detectors encounter challenges including low responsivity, a limited ultraviolet-to-visible cutoff ratio, sluggish response times, and elevated dark currents, thereby impeding their utilization in advanced domains like transient optical signal acquisition and high-precision measurement.
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