Two-dimensional (2D) semiconductors have garnered significant attention as prime candidate materials for next-generation optoelectronic devices. This is attributed to their atomic-scale thickness and distinctive optoelectronic characteristics. These materials are held together by van der Waals forces between their layers, which facilitates the exfoliation of individual monolayers. These monolayers can then be vertically stacked to form artificial heterostructures. Such heterostructures are capable of integrating the excitonic properties of each constituent layer. Moreover, by adjusting the interlayer twist angle, novel excitonic states can be generated. In addition, the ability to control the emission direction is of paramount importance for semiconductor light-emitting devices. Generally, achieving directional light emission necessitates near-field interactions between optical resonances and the emitting medium, enabling the radiation of light into the far field. Nevertheless, 2D semiconductors inherently lack optical resonances and thus depend on integration with external optical resonators to achieve this functionality.