The research team, spearheaded by Academician Hao Yue of Xidian University, has made a significant breakthrough in the realm of semiconductor materials. This achievement tackles a long-standing chip heat dissipation and performance bottleneck that has vexed the industry for two decades. Their pertinent research results have been featured in a prestigious international journal. Through enhancing the interfacial quality between layers of semiconductor materials, the study surmounts the constraints imposed by the traditional "island" architecture of the aluminum nitride intermediate layer on the power augmentation of radio-frequency chips. It diminishes interfacial thermal resistance to a mere one-third of its original value, effectively resolving the heat dissipation conundrum. The gallium nitride microwave power devices crafted using this technology have witnessed a 30% to 40% surge in power per unit area. This advancement heralds longer detection ranges for detection apparatus, broader signal coverage, and reduced energy consumption for communication base stations, while also elevating the experience for everyday users. Presently, the team is delving into the utilization of ultra-high thermal conductivity materials. Should they succeed, the power handling capacity of semiconductor devices is projected to soar more than tenfold from current levels, providing a pivotal foundation for the advancement of semiconductor devices.