Guangzhou has unveiled the Plan for Accelerating Guangzhou's Transformation into a Powerhouse in Advanced Manufacturing Industry (2024 - 2035). This plan sets forth an ambitious agenda to vigorously propel the manufacturing of third-generation semiconductor materials, such as silicon carbide, zinc oxide, and gallium oxide. It also emphasizes the need to bolster the research, development, and manufacturing of compound semiconductor devices and modules, exemplified by gallium nitride and silicon carbide. Moreover, the plan calls for an accelerated focus on the R&D and production of crucial materials, including photoresist and high-purity chemical reagents. It aims to nurture and fortify enterprises operating in the realms of compound semiconductor IDM (Integrated Device Manufacturer) and wide bandgap semiconductor materials. Additionally, the plan supports the R&D and commercialization of devices like radio frequency components and sensors, and promotes the widespread adoption and utilization of compound semiconductor products.