Wide-bandgap compound semiconductors, notably silicon carbide (SiC) and gallium nitride (GaN), are pivotal in cutting-edge electronic applications such as the electrification of vehicles and AI-driven data centers. These materials have drawn considerable industry focus, exhibiting robust growth potential. Lately, the fundamental strategies of Integrated Device Manufacturers (IDMs), fabless firms, and foundries are persistently transforming the SiC and GaN industrial terrain. In essence, SiC and GaN sit at the crossroads of several key trends—the global shift towards sustainability, the AI upheaval, and escalating geopolitical rivalries—and are poised to remain instrumental in the power electronics sector for the foreseeable future.
