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Recently, institutions like the Hefei Institutes of Physical Science under the Chinese Academy of Sciences have devised a first-principles-based multiscale model framework. This framework is designed for the multidimensional identification of deep-level defects in semiconductors that have undergone irradiation, tackling the difficulties in comprehending the atomic origins and kinetic evolution of non-equilibrium semiconductor defects. This innovative framework overcomes the technical hurdles associated with the precise identification of non-equilibrium defects and the accurate simulation of Deep Level Transient Spectroscopy (DLTS). It holds significant promise for application in areas such as the design of radiation-hardened electronic devices and solid-state qubits. The relevant findings have been published in Nature Communications.
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