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Gallium nitride (GaN) boasts distinctive properties, including a wide bandgap, a high critical breakdown electric field, and the ability to readily form high-mobility two-dimensional electron gas. These characteristics render GaN an exemplary semiconductor for crafting high-voltage, low-loss power devices, with immense potential in the realm of power electronics conversion. Over the past two years, Professor Luo Xiaorong's research team at the Power Integrated Technology Laboratory, School of Integrated Circuits, has made multiple breakthroughs in enhancing the radiation resistance, reliability, and power module research of GaN power devices. Their findings have been documented in several papers published in internationally recognized journals.
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