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As the quest for next-generation, cost-effective, and scalable electronic devices intensifies, tin-based perovskites have garnered significant attention. These materials boast a suite of attractive properties, including a low effective mass of holes, efficient carrier transport capabilities, minimal ion migration, and compatibility with solution-based processing techniques. However, the utilization of 3D tin-based halide perovskites is not without challenges. Their low activation energy and swift crystallization kinetics can readily compromise the quality of the resulting thin films, exacerbating defect formation. Moreover, the propensity of Sn2+ ions to oxidize into Sn4+ ions leads to the creation of tin vacancies. This phenomenon, in turn, induces severe p-type doping, which can significantly undermine the performance of electronic devices.
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