Recently, Israeli on-chip memory intellectual property (IP) startup RAAAM made an announcement that it had successfully completed a Series A funding round, raising $17.5 million. This round was led by NXP Semiconductors, and with this latest injection of capital, the company's total funding has now surpassed $24 million.

The GCRAM technology pioneered by RAAAM offers remarkable advantages over traditional high-density Static Random-Access Memory (SRAM). When compared to traditional high-density SRAM, it can slash the area occupied by up to 50% and cut power consumption by as much as 90%. Moreover, this innovative technology is fully compatible with standard Complementary Metal-Oxide-Semiconductor (CMOS) processes, enabling it to directly replace existing SRAM solutions.

RAAAM's GCRAM technology has undergone rigorous validation across a wide range of process nodes, spanning from 16nm to 180nm. Additionally, it has been successfully evaluated in the cutting-edge 5nm FinFET technology, demonstrating its versatility and potential for future semiconductor applications.

The newly acquired funds will be strategically allocated to fully certify GCRAM on advanced process nodes at multiple top-tier semiconductor foundries. This move is expected to further solidify RAAAM's position in the competitive memory market.

In addition to the funding news, RAAAM also revealed a close and strategic collaboration with NXP. The two companies will join forces to tackle the pressing challenges in the semiconductor memory field, leveraging their respective strengths and expertise to drive innovation and growth.